IRF1010EPBF TRANSISTER NMOS, 60V, 84A 200W -0.12R
€2.66
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Case type: TO-220AB:l Rectifier, polarity: N-channel, Termination: Through-hole mounting, ROHS: yes, Maximum voltage: 60V, max. Amp .: 84A, Maximum temperature: 175 ° C. 0.012 ohm, TO-220AB,
The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Industry-leading quality
Planar MOSFET technology
±20V gate to source voltage
1.4W/°C linear derating factor
50A avalanche current (IAR)
0.75°C/W thermal resistance, junction to case
62°C/W thermal resistance, junction to ambient.
Channel Type: N Channel Drain-Source Voltage (Vds): 60V Continuous Drain Current Id: 81A Drain-Source Resistance in Conductive State: 0.012ohm Transistor Package: TO-220AB Transistor Mounting: Through Hole Test Voltage Rds(on): 10V Max. Gate-Source Threshold Voltage: 4V Power Dissipation: 170W Number of Pins: 3Pins Max. Operating Temperature: 175°C
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Case type: TO-220AB:l Rectifier, polarity: N-channel, Termination: Through-hole mounting, ROHS: yes, Maximum voltage: 60V, max. Amp .: 84A, Maximum temperature: 175 ° C. 0.012 ohm, TO-220AB,