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FDS2672, MOSFET, CANAL N, 200V., 3.9A, SOIC8
€4.86
Tax included
- Intensidad Drenador Continua Id: 3.9A
- Diseño de Transistor: SOIC
- Disipación de Potencia Pd: 2.5W
- Tensión Drenaje-Fuente Vds: 200V
- Nivel de Sensibilidad a la Humedad (MSL): MSL 1 - Ilimitado
- Núm. de Contactos: 8
- Resistencia de Activación Rds(on): 0.059ohm
- Temperatura de Trabajo Máx.: 150°C
- Tensión Vgs de Medición Rds(on): 10V
- Sustancia Extremadamente Preocupante (SVHC): No SVHC (16-Jun-2014)
- Tensión Umbral Vgs: 2.9V
- Transistor, Polaridad: Canal N
2453411
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