FQD1N60CTM MOSFET, N CH, 600V, 9.3OHM, 1A, TO-252-3

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MOSFET Transister, Channel N, 1 A, 600 V, 9.3 ohm, 10 V, 2 V

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The FQD1N60CTM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
  • Low gate charge (4.8nC)
  • Low Crss (3.5pF)
  • 100% avalanche tested

Transistor Polarity: Channel N
Continuous Drain Current Id: 1A
Drain-Source Voltage (Vds): 600V
Resistance in Conductor State Rds (on): 9.3ohm
Vens Test Voltage Rds (on): 10V
Threshold Voltage Vgs: 2V
Power Dissipation Pd: 28W
Encapsulation of the Transistor: TO-252
Number of Pins: 3Pines
Max Operating Temperature: 150 ° C
Level of Sensitivity to Moisture (MSL MSL 1 - Unlimited

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