MJE3055T TRANSISTOR TO220 17J
€3.80
Tax included
Case Type: TO-220AB, Polarity: NPN, Termination: Through Hole Mount, ROHS: Yes, Frequency: 2MHz, Voltage (VCB): 70V, Voltage: 60V, Max Voltage: 60V, Capacity: 75W, Max Amps: 10A, Max Temperature: 150°C
The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the MJE2955T
Well-controlled hFE parameter for increased reliability
Transistor Polarity: NPN DC Collector Current: 10A Transistor Package: TO-220 Number of Pins: 3 Min. DC Current Gain hFE: 400hFE Max. Collector-Emitter Voltage: 60V Power Dissipation: 75W Transistor Mounting: Through Hole Transition Frequency: 2MHz Max. Operating Temperature: 150°C Substance of Extreme Concern (SVHC): No SVHC (Jan 21, 2025)
9802460
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Case Type: TO-220AB, Polarity: NPN, Termination: Through Hole Mount, ROHS: Yes, Frequency: 2MHz, Voltage (VCB): 70V, Voltage: 60V, Max Voltage: 60V, Capacity: 75W, Max Amps: 10A, Max Temperature: 150°C