STD5NM60T4 MOSFET, N, D-PAK

The STD5NM60T4 is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
    100% Avalanche tested
    High dv/dt and avalanche capabilities
    Low input capacitance and gate charge
    Low gate input resistance

Channel Type: N-Channel Continuous Drain Current (Id): 5A Transistor Package: TO-252 (DPAK) On-Screen Voltage (Rds): 10V Power Dissipation: 96W Maximum Operating Temperature: 150°C Substance of Extremely Concern (SVHC): Non-SVHC (June 25, 2025) Drain-Source Voltage (Vds): 650V On-Screen-Source Resistance: 1 ohm Transistor Mounting: Surface Mount Maximum Gate-Source Threshold Voltage: 4V Number of Pins: 3 Pins Moisture Sensitivity Level (MSL): MSL 1 - Unlimited