STD5NM50T4 TRANSISTOR MOSFET, CANAL N,
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5NM50T4 Power MOSFET, N-Channel, 650 V, 5 A, 1 ohm, TO-252 (DPAK), Surface Mount
The STD5NM60T4 is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
100% Avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance
Channel Type: N-Channel Continuous Drain Current (Id): 5A Transistor Package: TO-252 (DPAK) On-Screen Voltage (Rds): 10V Power Dissipation: 96W Max. Operating Temperature: 150°C Substance of Extremely Concern (SVHC): Non-SVHC (June 25, 2025) Drain-Source Voltage (Vds): 650V On-Screen-Source Resistance: 1 ohm Transistor Mounting: Surface Mount Max. Gate-Source Threshold Voltage: 4V Number of Pins: 3 Pins Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
3001769
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5NM50T4 Power MOSFET, N-Channel, 650 V, 5 A, 1 ohm, TO-252 (DPAK), Surface Mount